The second mechanism, which is the primary focus of the present paper, involves insertion of interstitials into dangling bonds at the surface.
2008, E. G. Seebauer et al., Defect Engineering for Ultrashallow Junctions using Surfaces, in P. J. Timans, E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom (editors), Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment, ECS Transactions: Volume 13, Issue 1, page 56